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| BCR20RM-30LA Triac Medium Power Use REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Features * IT (RMS) : 20 A * VDRM : 1500 V * IFGTI, IRGTI, IRGT III : 50 mA * Viso : 2000 V * Insulated Type * Planar Passivation Type Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications Motor and heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltage Note1 Symbol VDRM VDSM Voltage class 30 1500 1600 Unit V V REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 1 of 6 BCR20RM-30LA Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbo l IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 20 200 200 5 0.5 10 3 - 40 to +125 - 40 to +125 5.2 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 83C 50 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Note2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2 -- 20 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 10 1.6 3.0 3.0 3.0 50 50 50 -- 1.6 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 30 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to case Note3 Tj = 125C Gate trigger current Note2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.4C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = -10 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Time VD REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 2 of 6 BCR20RM-30LA Performance Curves Maximum On-State Characteristics 103 240 Rated Surge On-State Current Surge On-State Current (A) On-State Current (A) Tj = 25C 200 160 120 80 40 0 100 102 Tj = 125C 101 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 3 5 7 101 2 3 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 50 Hz) x 100 (%) Gate Characteristics (I, II and III) 102 VFGM = 10 V Gate Trigger Current vs. Junction Temperature 103 Typical Example Gate Voltage (V) 101 PGM = 5 W VGT = 3.0 V PG(AV) = 0.5 W IGT = 50 mA Gate Trigger Current (Tj = 25C) Gate Trigger Current (Tj = tC) IRGT III IRGT I 100 IFGM = 3 A 102 IFGT I 10-1 VGD = 0.2 V 10-2 101 102 103 104 101 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) x 100 (%) Gate Trigger Voltage vs. Junction Temperature 103 Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.4 1.0 0 10-1 100 101 102 103 104 Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage (Tj = tC) 102 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Conduction Time (Cycles at 50 Hz) REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 3 of 6 BCR20RM-30LA Allowable Case Temperature vs. RMS On-State Current 160 140 Maximum On-State Power Dissipation 40 On-State Power Dissipation (W) Curves apply regardless of conduction angle 30 360 Conduction Resistive, inductive loads 20 Case Temperature (C) 15 20 25 30 120 100 80 60 40 10 0 0 5 10 360 Conduction 20 Resistive, inductive loads 0 5 10 15 0 20 25 30 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased Natural convection Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Ambient Temperature (C) 120 100 Ambient Temperature (C) 140 140 120 100 80 60 40 20 0 0 0.5 1 160 160 t2.3 80 120 120 t2.3 60 100 100 t2.3 40 20 0 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 RMS On-State Current (A) RMS On-State Current (A) x 100 (%) Repetitive Peak Off-State Current vs. Junction Temperature x 100 (%) 105 Typical Example Holding Current vs. Junction Temperature 103 Typical Example Repetitive Peak Off-State Current (Tj = 25C) Repetitive Peak Off-State Current (Tj = tC) 104 Holding Current (Tj = 25C) Holding Current (Tj = tC) 102 103 102 -60 -40 -20 0 20 40 60 80 100 120 140 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Junction Temperature (C) REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 4 of 6 BCR20RM-30LA Latching Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature x 100 (%) 103 160 Typical Example Latching Current (mA) Breakover Voltage (Tj = 25C) 102 Breakover Voltage (Tj = tC) Distribution T2+, G- Typical Example 120 80 101 T2-, G- Typical Example 40 T2+, G+ Typical Example 100 -60 -40 -20 0 20 40 60 80 100 120 140 0 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Junction Temperature (C) x 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 101 102 I Quadrant III Quadrant Commutation Characteristics 102 Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (dv/dt = xV/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Typical Example Tj = 125C Typical Example Tj = 125C IT = 4 A = 500s VD = 200V f = 3Hz Minimum Characteristics 1 Value 10 III Quadrant 103 104 100 100 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time I Quadrant 101 102 103 Rate of Rise of Off-State Voltage (V/s) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) 103 IRGT III IFGT I Typical Example Gate Trigger Current (DC) Gate Trigger Current (tw) IRGT I 102 101 100 101 102 Gate Current Pulse Width (s) REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 5 of 6 BCR20RM-30LA Gate Trigger Characteristics Test Circuits 6 Recommended Circuit Values Around The Triac Load 6 C1 6V V A 6V A V R1 330 C0 R0 330 Test Procedure I 6 Test Procedure II C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 6V V A 330 Test Procedure III REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 6 of 6 BCR20RM-30LA Package Dimensions Package Name TO-3PFM JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV MASS[Typ.] 5.2g Unit: mm 5.5 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.0 0.3 2.7 0.3 5.0 0.3 19.9 0.3 2.0 0.3 0.66 5.45 0.5 + 0.2 - 0.1 21.0 0.5 4.0 0.3 2.6 0.86 3.2 0.3 1.6 0.86 0.2 0.9 + 0.1 - 5.45 0.5 Order Code Lead form Straight type Standard packing Magazine (Tube) Quantity 30 Standard order code Type name Standard order code example BCR20RM-30LA Note : Please confirm the specification about the shipping in detail. REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 7 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. 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Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. 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